Semiconductor structures with thinned junctions and methods of manufacture

US8669146B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Michel J. Abou-Khalil · South Burlington, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• Junjun Li · Williston, US
• Souvick Mitra · South Burlington, US
• Christopher S. Putnam · South Burlington, US

Key dates

• Filing date: Jan 13, 2011
• Grant date: Mar 11, 2014
• Expiry date: Mar 8, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/811

Abstract

A method of forming a semiconductor structure, including forming a channel in a first portion of a semiconductor layer and forming a doped extension region in a second portion of the semiconductor layer abutting the channel on a first side and abutting an insulator material on a bottom side. The first portion of the semiconductor layer is thicker than the second portion of the semiconductor layer.