Methods of forming high mobility fin channels on three dimensional semiconductor devices

US8669147B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Daniel T. Pham · Clifton Park, US
• Robert J. Miller · Yorktown Heights, US
• Kingsuk Maitra · Fremont, US

Key dates

• Filing date: Jun 11, 2012
• Grant date: Mar 11, 2014
• Expiry date: Jun 11, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

Disclosed herein are various methods of forming high mobility fin channels on three dimensional semiconductor devices, such as, for example, FinFET semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define an original fin structure for the device, and wherein a portion of a mask layer is positioned above the original fin structure, forming a compressively-stressed material in the trenches and adjacent the portion of mask layer, after forming the compressively-stressed material, removing the portion of the mask layer to thereby expose an upper surface of the original fin structure, and forming a final fin structure above the exposed surface of the original fin structure.