Patent · US Active

High-K metal gate electrode structures formed at different process stages of a semiconductor device

US8669151B2 · kind B2 · utility

4Cited by

0References

17Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Jan Hoentschel · Dresden, DE
Sven Beyer · Dresden, DE
Thilo Scheiper · Dresden, DE
Uwe Griebenow · Markkleeberg, DE

Key dates

Filing date	Oct 21, 2010
Grant date	Mar 11, 2014
Priority date	—
Expiry date	Aug 17, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Sophisticated high-k metal gate electrode structures are provided on the basis of a hybrid process strategy in which the work function of certain gate electrode structures is adjusted in an early manufacturing stage, while, in other gate electrode structures, the initial gate stack is used as a dummy material and is replaced in a very advanced manufacturing stage. In this manner, superior overall process robustness in combination with enhanced device performance may be achieved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.