Method of tailoring conformality of Si-containing film
US8669185B2 · kind B2 · utility
566Cited by
8References
14Claims
0Family size
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Key dates
| Filing date | Jul 30, 2010 |
| Grant date | Mar 11, 2014 |
| Priority date | — |
| Expiry date | Oct 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of tailoring conformality of a film deposited on a patterned surface includes: (I) depositing a film by PEALD or pulsed PECVD on the patterned surface; (II) etching the film, wherein the etching is conducted in a pulse or pulses, wherein a ratio of an etching rate of the film on a top surface and that of the film on side walls of the patterns is controlled as a function of the etching pulse duration and the number of etching pulses to increase a conformality of the film; and (III) repeating (I) and (II) to satisfy a target film thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.