Patent · US Active

Method of operating phase-change memory

US8670270B2 · kind B2 · utility

0Cited by

3References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jan Otterstedt · Unterhaching, DE
Thomas Nirschl · Putzbrunn, DE
Christian Peters · Mountain View, US
Michael Bollu · Munich, DE
Wolf Allers · Munich, DE
Michael Sommer · Raubling, DE

Key dates

Filing date	Feb 23, 2012
Grant date	Mar 11, 2014
Priority date	—
Expiry date	Feb 23, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

One or more embodiments may be related to a method of operating a phase-change memory element, comprising: providing the phase-change memory element, the phase-change memory element having a first terminal and a second terminal; causing a first current through the memory element from the first terminal to the second terminal; and causing a second current through the memory element from the second terminal to the first terminal, wherein the causing the first current programs the memory element from a first resistance state to a second resistance state and the causing the second current programs the memory element from the first resistance state to the second resistance state.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.