Patent · US Active

Memory and method for programming memory cells

US8670277B2 · kind B2 · utility

0Cited by

4References

27Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Nirschl · Putzbrunn, DE
Jan Otterstedt · Unterhaching, DE
Wolf Allers · Munich, DE
Dominique Savignac · Ismaning, DE

Key dates

Filing date	Jul 27, 2011
Grant date	Mar 11, 2014
Priority date	—
Expiry date	Feb 8, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/6892
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory includes a memory cell including a first terminal, a second terminal and a channel extending between the first terminal and the second terminal. The memory further includes an energy storage element configured to support a programming of the memory cell, the energy storage element being coupled to the first terminal, an energy supply coupled to the energy storage element, and a controller. The controller is configured to activate the energy supply and to bring the channel of the memory cell into a non-conductive state for energizing the energy storage element, and to subsequently bring the channel of the memory cell into a conductive state for programming the memory cell based on the energy stored in the energy storage element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.