Profile and CD uniformity control by plasma oxidation treatment
US8671878B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2012 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Sep 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus for forming spacers is provided. A plasma processing chamber is provided, comprising a chamber wall, a substrate support, a pressure regulator, an antenna, a bias electrode, a gas inlet, and a gas outlet. A gas source comprises an oxygen gas source and an anisotropic etch gas source. A controller comprises a processor and computer readable media. The computer readable media comprises computer readable code for placing a substrate of the plurality of substrates in a plasma etch chamber, computer readable code for providing a plasma oxidation treatment to form a silicon oxide coating over the spacer layer, computer readable code for sputtering silicon to form silicon oxide with the oxygen plasma, computer readable code for providing an anisotropic main etch, computer readable code for etching the spacer layer, computer readable code for removing the substrate from the plasma etch chamber after etching the spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.