Gowri Kamarthy
16Patents
6h-index
50Co-inventors
65Inventor score
Filing activity: Jan 7, 2009 → Sep 10, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9252238B1 | Semiconductor structures with coplanar recessed gate layers and fabrication methods | Electricity | 405 | Active |
| US9245761B2 | Internal plasma grid for semiconductor fabrication | Electricity | 18 | Active |
| US8852964B2 | Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis | Electricity | 14 | Active |
| US9230819B2 | Internal plasma grid applications for semiconductor fabrication in context of ion-ion plasma processing | Electricity | 13 | Active |
| US9460894B2 | Controlling ion energy within a plasma chamber | Electricity | 8 | Active |
| US10141163B2 | Controlling ion energy within a plasma chamber | Electricity | 6 | Active |
| US9633846B2 | Internal plasma grid applications for semiconductor fabrication | Electricity | 6 | Active |
| US10224221B2 | Internal plasma grid for semiconductor fabrication | Electricity | 6 | Active |
| US9012243B2 | Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis | Electricity | 4 | Active |
| US8298949B2 | Profile and CD uniformity control by plasma oxidation treatment | Electricity | 2 | Active |
| US8671878B2 | Profile and CD uniformity control by plasma oxidation treatment | Electricity | 1 | Active |
| US8999184B2 | Method for providing vias | Electricity | 1 | Active |
| US10424461B2 | Controlling ion energy within a plasma chamber | Electricity | 1 | Active |
| US9589853B2 | Method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber | Electricity | 0 | Active |
| US9385003B1 | Residue free systems and methods for isotropically etching silicon in tight spaces | Electricity | 0 | Active |
| US12080592B2 | Film stack simplification for high aspect ratio patterning and vertical scaling | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.