Multi-energy ion implantation
US8673753B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 3, 2012 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Dec 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.