Antimony compounds useful for deposition of antimony-containing materials
US8674127B2 · kind B2 · utility
1Cited by
12References
26Claims
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Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | May 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of A Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM) or for the manufacturing of thermoelectric devices, by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.