Patent · US Active

Method and apparatus for analyzing and/or repairing of an EUV mask defect

US8674329B2 · kind B2 · utility

3Cited by

5References

10Claims

0Family size

Assignees

Carl Zeiss SMS Ltd. · IL
Carl Zeiss SMT GmbH · DE

Inventors

Michael Budach · Hanau, DE
Tristan Bret · Darmstadt, DE
Klaus Edinger · Lorsch, DE
Thorsten Hofmann · Rodgau, DE
Heiko Feldmann · Aalen, DE
Johannes Ruoff · Aalen, DE

Key dates

Filing date	Jun 24, 2011
Grant date	Mar 18, 2014
Priority date	—
Expiry date	Jun 24, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG21K5/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.