Memory component and memory device

US8674335B2 · kind B2 · utility

Assignee

• SONY GROUP CORPORATION · JP

Inventors

• Shuichiro Yasuda · Boise, US
• Katsuhisa Aratani · Yokohama, JP
• Kazuhiro Ohba · Rifu, JP
• Hiroaki Sei · Yokohama, JP

Key dates

• Filing date: Jan 12, 2011
• Grant date: Mar 18, 2014
• Expiry date: Feb 13, 2031

Classification

• Technology area (CPC —): General

Abstract

A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side.