Plasma processing apparatus and processing gas supply structure thereof
US8674607B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 25, 2011 |
| Grant date | Mar 18, 2014 |
| Priority date | — |
| Expiry date | Apr 29, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/8593
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.