Photoresist removal
US8679734B2 · kind B2 · utility
1Cited by
19References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Aug 7, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.