Shallow trench isolation for device including deep trench capacitors
US8679938B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 6, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Mar 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for formation of a shallow trench isolation (STI) in an active region of a device comprising trench capacitive elements, the trench capacitive elements comprising a metal plate and a high-k dielectric includes etching a STI trench in the active region of the device, wherein the STI trench is directly adjacent to at least one of the metal plate or high-k dielectric of the trench capacitive elements; and forming an oxide liner in the STI trench, wherein the oxide liner is formed selectively to the metal plate or high-k dielectric, wherein forming the oxide liner is performed at a temperature of about 600° C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.