Patent · US Active

Progressive trimming method

US8679944B2 · kind B2 · utility

11Cited by

21References

17Claims

0Family size

Assignee

SOITEC · FR

Inventors

Marcel Broekaart · Theys, FR
Marion Migette · Grenoble, FR
Sebastien Molinari · Saint-Égrève, FR
Eric Neyret · Saint-Égrève, FR

Key dates

Filing date	Jul 31, 2009
Grant date	Mar 25, 2014
Priority date	—
Expiry date	Jan 31, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.