Method for forming a self-aligned contact opening by a lateral etch
US8679968B2 · kind B2 · utility
18Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | May 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-aligned source/drain contact formation process without spacer or cap loss is described. Embodiments include providing two gate stacks, each having spacers on opposite sides, and an interlayer dielectric (ILD) over the two gate stacks and in a space therebetween, forming a vertical contact opening within the ILD between the two gate stacks, and laterally removing ILD between the two gate stacks from the vertical contact opening toward the spacers, to form a contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.