Schottky diode

US8680587B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Jason Henning · Carrboro, US
• Qingchun Zhang · Cary, US
• Sei-Hyung Ryu · Cary, US
• Anant Agarwal · San Jose, US
• John Williams Palmour · Raleigh, US
• Scott Allen · Apex, US

Key dates

• Filing date: Sep 11, 2011
• Grant date: Mar 25, 2014
• Expiry date: Sep 11, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer.