Method of forming a capacitor

US8685828B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Lehnert · Lintach, DE
• Michael Stadtmueller · Villach, AT
• Stefan Pompl · Landshut, DE
• Markus Meyer · Annaberg-Buchholz, DE

Key dates

• Filing date: Jan 14, 2011
• Grant date: Apr 1, 2014
• Expiry date: Sep 28, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/665

Abstract

A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.