Gallium and nitrogen containing trilateral configuration for optical devices
US8686431B2 · kind B2 · utility
14Cited by
37References
25Claims
0Family size
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Key dates
| Filing date | Oct 25, 2011 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
Techniques for manufacturing optical devices, such as light emitting diodes (LEDs) using a separation process of thick gallium and nitrogen containing substrate members, are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.