Resistance-switching memory cells adapted for use at low voltage
US8686476B2 · kind B2 · utility
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20References
20Claims
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Key dates
| Filing date | Jan 4, 2013 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Jan 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound, and (b) has a thickness between 20 and 65 angstroms. Other aspects are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.