Semiconductor component with trench isolation and corresponding production method

US8691660B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Schuler · Kreßbronn, DE
• Georg Tempel · Zorneding, DE

Key dates

• Filing date: Sep 15, 2010
• Grant date: Apr 8, 2014
• Expiry date: Jan 16, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76232
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a semiconductor component with trench isolation and to an associated fabrication method, a trench isolation (STI, TTI) having a deep isolation trench with a covering insulation layer (10, 11), a side wall insulation layer (6) and an electrically conductive filling layer (7), which is electrically connected to a predetermined doping region (1) of the semiconductor substrate in a bottom region of the trench. The use of a trench contact (DTC), which has a deep contact trench with a side wall insulation layer (6) and an electrically conductive filling layer (7), which is likewise electrically connected to the predetermined doping region (1) of the semiconductor substrate in a bottom region of the contact trench, makes it possible to improve the electrical shielding properties with a reduced area requirement.