Method for producing bonded wafer
US8691665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2010 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Nov 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.