Controlled gas mixing for smooth sidewall rapid alternating etch process
US8691698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2012 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Mar 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features in a silicon layer disposed below a mask in a plasma processing chamber a plurality of cycles is provided. A deposition phase forming a deposition on the silicon layer in the plasma processing chamber is provided comprising providing a deposition gas into the plasma processing chamber wherein the deposition gas comprises a halogen containing etchant component and a fluorocarbon deposition component, forming the deposition gas into a plasma, which provides a net deposition on the silicon layer, and stopping the flow of the deposition gas. A silicon etch phase is provided, comprising providing a silicon etch gas into the plasma processing chamber that is different than the deposition gas, forming the silicon etch gas into a plasma to etch the silicon layer, and stopping the flow of the silicon etch gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.