Gas cluster ion beam etch profile control using beam divergence
US8691700B2 · kind B2 · utility
4Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2011 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jan 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.