Non-volatile memory device and method for fabricating the same
US8692314B2 · kind B2 · utility
9Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Dec 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
Abstract
A non-volatile memory device includes a pair of columnar cell channels vertically extending from a substrate, a doped pipe channel arranged to couple lower ends of the pair of columnar cell channels, insulation layers over the substrate in which the doped pipe channel is buried, memory layers arranged to surround side surfaces of the columnar cell channels, and control gate electrodes arranged to surround the memory layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.