Reference averaging for MRAM sense amplifiers
US8693273B2 · kind B2 · utility
21Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2012 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | May 7, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.