Film deposition apparatus and film deposition method
US8696814B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 29, 2007 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Apr 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A disclosed film deposition apparatus includes a process chamber inside which a reduced pressure space is maintained; a gas supplying portion that supplies a film deposition gas to the process chamber; a substrate holding portion that is made of a material including carbon as a primary constituent and holds a substrate in the process chamber; a coil that is arranged outside the process chamber and inductively heats the substrate holding portion; and a thermal insulation member that covers the substrate holding portion and is arranged to be separated from the process chamber, wherein the reduced pressure space is separated into a film deposition gas supplying space to which the film deposition gas is supplied and a thermal insulation space defined between the substrate holding portion and the process chamber, and wherein a cooling medium is supplied to the thermal insulation space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.