Bonding surfaces for direct bonding of semiconductor structures
US8697493B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 18, 2011 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jul 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of directly bonding a first semiconductor structure to a second semiconductor structure include directly bonding at least one device structure of a first semiconductor structure to at least one device structure of a second semiconductor structure in a conductive material-to-conductive material direct bonding process. In some embodiments, at least one device structure of the first semiconductor structure may be caused to project a distance beyond an adjacent dielectric material on the first semiconductor structure prior to the bonding process. In some embodiments, one or more of the device structures may include a plurality of integral protrusions that extend from a base structure. Bonded semiconductor structures are fabricated using such methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.