Deposition of porous films for thermoelectric applications
US8697549B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Aug 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/8556
Abstract
An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.