Patent · US Active

Deposition of porous films for thermoelectric applications

US8697549B2 · kind B2 · utility

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18Claims
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Key dates

Filing dateAug 16, 2012
Grant dateApr 15, 2014
Priority date
Expiry dateAug 16, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N10/8556

Abstract

An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.