Power MOSFET contact metallization
US8697571B2 · kind B2 · utility
3Cited by
61References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Oct 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.