Jason Qi
5Patents
3h-index
6Co-inventors
42Inventor score
Filing activity: May 13, 2004 → Oct 17, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6906380B1 | Drain side gate trench metal-oxide-semiconductor field effect transistor | Electricity | 43 | Expired |
| US7344945B1 | Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor | Electricity | 19 | Expired |
| US8183629B2 | Stacked trench metal-oxide-semiconductor field effect transistor device | Electricity | 8 | Active |
| US8471390B2 | Power MOSFET contact metallization | Electricity | 3 | Active |
| US8697571B2 | Power MOSFET contact metallization | Electricity | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.