FinFET structure

US8698199B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Tong-Yu Chen · Baoshan, TW
• Chih-Jung Wang · Hsinchu, TW

Key dates

• Filing date: Jan 11, 2012
• Grant date: Apr 15, 2014
• Expiry date: Jan 11, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/792

Abstract

A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the L-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the L-shaped insulator and partially on the first fin structure.