Method and system for forming patterns with charged particle beam lithography
US8703389B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2011 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Aug 1, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). At least some shots in the plurality of shots overlap other shots. In some embodiments, βf is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to βf expands the process window for the charged particle beam lithography process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.