Process for forming contact plugs
US8703612B2 · kind B2 · utility
0Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2011 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Sep 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming an etch stop layer over and contacting a gate electrode of a transistor, forming a sacrificial layer over the etch stop layer, and etching the sacrificial layer, the etch stop layer, and an inter-layer dielectric layer to form an opening. The opening is then filled with a metallic material. The sacrificial layer and excess portions of the metallic material over a top surface of the etch stop layer are removed using a removal step including a CMP process. The remaining portion of the metallic material forms a contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.