Methods for PFET fabrication using APM solutions

US8703620B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Joanna Wasyluk · Dresden, DE
• Stephan Kronholz · Dresden, DE
• Berthold Reimer · Dresden, DE
• Sven Metzger · Dresden, DE
• Gregory Nowling · San Jose, US
• John Foster · Mountain View, US
• Paul R. Besser · Sunnyvale, US

Key dates

• Filing date: Aug 1, 2012
• Grant date: Apr 22, 2014
• Expiry date: Aug 1, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating an integrated circuit from a semiconductor substrate having formed thereon over a first portion of the semiconductor substrate a hard mask layer and having formed thereon over a second portion of the semiconductor substrate an oxide layer. The first portion and the second portion are electrically isolated by a shallow trench isolation feature. The method includes removing the oxide layer from over the second portion and recessing the surface region of the second portion by applying an ammonia-hydrogen peroxide-water (APM) solution to form a recessed surface region. The APM solution is provided in a concentration of ammonium to hydrogen peroxide ranging from about 1:1 to about 1:0.001 and in a concentration of ammonium to water ranging from about 1:1 to about 1:20. The method further includes epitaxially growing a silicon-germanium (SiGe) layer on the recessed surface region.