Schottky and MOSFET+Schottky structures, devices, and methods
US8704295B1 · kind B1 · utility
46Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2011 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Sep 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
Power devices which include trench Schottky barrier diodes and also (preferably) trench-gate transistors. Isolation trenches flank both the gate regions and the diode mesas, and have an additional diffusion below the bottom of the isolation trenches. The additional diffusion helps to reduce the electric field (and leakage), when the device is in the OFF state, at both the Schottky barrier and at the body diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.