Strain induced reduction of switching current in spin-transfer torque switching devices
US8704320B2 · kind B2 · utility
36Cited by
1References
14Claims
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Key dates
| Filing date | Jan 26, 2012 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Jan 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Partial perpendicular magnetic anisotropy (PPMA) type magnetic random access memory cells are constructed using processes and structural configurations that induce a directed static strain/stress on an MTJ to increase the perpendicular magnetic anisotropy. Consequently, reduced switching current of the MTJ results. The directed static strain/stress on the MTJ is induced in a controlled direction and/or with a controlled magnitude during fabrication. The MTJ is permanently subject to a predetermined directed stress and permanently includes the directed static strain/strain that provides reduced switching current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.