Patent · US Active

Current sensor including a sintered metal layer

US8704514B2 · kind B2 · utility

1Cited by

13References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Mario Motz · Wernberg, AT
Udo Ausserlechner · Villach, AT
Martin Mischitz · Wernberg, AT

Key dates

Filing date	Feb 11, 2010
Grant date	Apr 22, 2014
Priority date	—
Expiry date	Apr 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10N52/80
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An integrated circuit includes a semiconductor die including a first magnetic field sensor. The integrated circuit includes an isolation material layer over the first magnetic field sensor and a sintered metal layer over the isolation material layer. The first magnetic field sensor is configured to sense a magnetic field generated by a current passing through the sintered metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.