Method for conductivity control of (Al,In,Ga,B)N
US8709925B2 · kind B2 · utility
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24Claims
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Key dates
| Filing date | Apr 5, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Apr 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.