Tungsten barrier and seed for copper filled TSV

US8709948B2 · kind B2 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Michal Danek · Cupertino, US
• Tom Mountsier · San Jose, US
• Jonathan D. Reid · Sherwood, US
• Juwen Gao · San Jose, US
• Aaron R. Fellis · San Jose, US

Key dates

• Filing date: Mar 12, 2010
• Grant date: Apr 29, 2014
• Expiry date: Jul 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Apparatus and methods for filling through silicon vias (TSV's) with copper having an intervening tungsten layer between the copper plug and the silicon are disclosed. Methods are useful for Damascene processing, with or without a TSV feature. The tungsten layer serves as a diffusion barrier, a seed layer for copper electrofill and a means of reducing CTE-induced stresses between copper and silicon. Adhesion of the tungsten layer to the silicon and of the copper layer to the tungsten is described.