Patent · US Active

Ion beam system and method of operating ion beam system

US8710451B2 · kind B2 · utility

0Cited by

5References

5Claims

0Family size

Assignee

Carl Zeiss Microscopy GmbH · DE

Inventors

Josef Biberger · Rottenburg a. d. Laaber, DE
Ralph Pulwey · Aalen, DE
Andreas Adolf · Aalen, DE

Key dates

Filing date	Sep 30, 2011
Grant date	Apr 29, 2014
Priority date	—
Expiry date	Jan 5, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31749
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An ion beam system comprises a voltage supply system 7 and at least one beam deflector 39 having a plurality of first defection electrodes 51a, 51b, 51c and a plurality of second deflection electrodes 52a, 52b, 52c wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plurality of second deflection electrodes such that electric deflection fields between the plurality of second deflection electrodes and the plurality of opposite first deflection electrodes have a common orientation. The ion beam system has a high kinetic energy mode in which a distribution of the electric deflection fields has a greater width, and a low kinetic energy mode in which a distribution of the electric deflection fields has a smaller width.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.