Memory component and memory device
US8710482B2 · kind B2 · utility
1Cited by
1References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 12, 2011 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Jan 12, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/56
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.