Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same
US8710489B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2010 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Jul 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.