AIN buffer N-polar GaN HEMT profile

US8710511B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Vincent Gambin · Rancho Palos Verdes, US
• Xing Gu · Allen, US
• Benjamin Heying · Fullerton, US

Key dates

• Filing date: Jul 29, 2011
• Grant date: Apr 29, 2014
• Expiry date: Aug 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

An N-face GaN HEMT device including a semiconductor substrate, a buffer layer including AlN or AlGaN deposited on the substrate, a barrier layer including AlGaN or AlN deposited on the buffer layer and a GaN channel layer deposited on the barrier layer. The channel layer, the barrier layer and the buffer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.