Micromachined devices and fabricating the same

US8710599B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventors

• David Lambe Marx · Pleasanton, US
• Cenk Acar · Laguna Beach, US
• Sandeep Akkaraju · Wellesley, US
• Janusz Bryzek · Oakland, US

Key dates

• Filing date: Aug 3, 2010
• Grant date: Apr 29, 2014
• Expiry date: Oct 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2224/48091
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Micromachined devices and methods for making the devices. The device includes: a first wafer having at least one via; and a second wafer having a micro-electromechanical-systems (MEMS) layer. The first wafer is bonded to the second wafer. The via forms a closed loop when viewed in a direction normal to the top surface of the first wafer to thereby define an island electrically isolated. The method for fabricating the device includes: providing a first wafer having at least one via; bonding a second wafer having a substantially uniform thickness to the first wafer; and etching the bonded second wafer to form a micro-electromechanical-systems (MEMS) layer.