Method of manufacturing semiconductor devices using ion implantation

US8710620B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Johannes Georg Laven · Taufkirchen, DE
• Dieter Fuchs · Simmerath, DE
• Werner Schustereder · Villach, AT
• Roman Knoefler · Villach, AT

Key dates

• Filing date: Jul 18, 2012
• Grant date: Apr 29, 2014
• Expiry date: Jul 18, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A manufacturing method provides a semiconductor device with a substrate layer and an epitaxial layer adjoining the substrate layer. The epitaxial layer includes first columns and second columns of different conductivity types. The first and second columns extend along a main crystal direction along which channeling of implanted ions occurs from a first surface into the epitaxial layer. A vertical dopant profile of one of the first and second columns includes first portions separated by second portions. In the first portions a dopant concentration varies by at most 30%. In the second portions the dopant concentration is lower than in the first portions. The ratio of a total length of the first portions to the total length of the first and second portions is at least 50%. The uniform dopant profiles improve device characteristics.