Compound semiconductor epitaxial structure and method for fabricating the same
US8710632B2 · kind B2 · utility
6Cited by
77References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a compound semiconductor epitaxial structure includes the following steps. Firstly, a first compound epitaxial layer is formed on a substrate. Then, a continuous epitaxial deposition process is performed to form a second compound epitaxial layer on the first compound epitaxial layer, so that the second compound epitaxial layer has a linearly-decreased concentration gradient of metal. Afterwards, a semiconductor material layer is formed on the second compound epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.