Patent · US Active

Redistribution layer (RDL) with variable offset bumps

US8710656B2 · kind B2 · utility

3Cited by
5References
19Claims
0Family size

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Key dates

Filing dateJul 20, 2012
Grant dateApr 29, 2014
Priority date
Expiry dateJul 20, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3512
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit (IC) chip is disclosed including a plurality of metal vertical interconnect accesses (vias) in a back end of line (BEOL) layer, a redistribution layer (RDL) on the BEOL layer, the BEOL layer having a plurality of bond pads, each bond pad connected to at least one corresponding metal via through the RDL; and a solder bump connected to each bond pad, wherein each solder bump is laterally offset from the corresponding metal via connected to the bond pad towards a center of the IC chip by an offset distance, wherein the offset distance is non-uniform across the IC chip. In one embodiment, the offset distance for each solder bump is proportionate to a distance between the center of the IC chip and the center of the corresponding solder bump pad structure for that solder bump.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.