High throughput thin film characterization and defect detection
US8711349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2012 |
| Grant date | Apr 29, 2014 |
| Priority date | — |
| Expiry date | Sep 25, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/211
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.